Photon-stimulated ion desorption from DCOO/si(100) near the O K-edge

Surface Science

Volumn 390, Issue 1-3, 1997, Pages 214-218

  Sekiguchi, Hiromi Ikeura ^a   Sekiguchi, Tetsuhiro ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Chemisorption; Formic acid; Near edge X ray absorption fine structure (NEXAFS); Photon stimulated desorption (PSD); Silicon

Indexed keywords

CARBOXYLIC ACIDS; CHEMICAL BONDS; CHEMISORPTION; CRYSTAL ORIENTATION; DESORPTION; MOLECULAR STRUCTURE; PHOTONS; SURFACE PHENOMENA; SYNCHROTRON RADIATION; X RAY ANALYSIS;

FORMIC ACID; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; PHOTON STIMULATED DESORPTION;

SEMICONDUCTING SILICON;

EID: 0031268809     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00552-9     Document Type: Article

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