Deep interface states in SiO2/p-type α-SiC structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 PART A, 1997, Pages

  Inoue, Naoya ^a   Kimoto, Tsunenobu ^a   Yano, Hiroshi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deep interface states; Fixed charges; High frequency C V characteristics; Light illumination effects; MOS; p type; Thermal oxidation; SiC

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER COMMUNICATION; ELECTRIC CHARGE; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICA; SILICON CARBIDE; THERMOOXIDATION; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; DEEP INTERFACE STATES; VOLTAGE SHIFT;

HETEROJUNCTIONS;

EID: 0031268294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1430     Document Type: Article

References (9)

1. J. W. Palmour, J. A. Edmond, H. S. Kong and C. H. Carter, Jr.: Silicon Carbide & Related Materials 1993 (Institute of Physics, Bristol, 1994) p. 499.
2. D. M. Brown, M. Ghezzo, J. W. Kretchmer, V. Krishnamarthy, G. Michon and G. Gati: Trans. 2nd High Temperature Electronics Conf. (Charlotte, 1994) XI-17.
3. W. Xie, J. A. Cooper, Jr. and M. R. Melloch: IEEE Electron Dev. Lett. 15 (1994) 445.
4. J. N. Pan, J. A. Cooper, Jr. and M. R. Melloch: J. Appl. Phys. 78 (1995) 572.
5. T. Ouisse, N. B́ecourt, C. Jaussaud and F. Templier: J. Appl. Phys. 75 (1994) 604.
6. S. T. Sheppard, J. A. Cooper, Jr. and M. R. Melloch: J. Appl. Phys. 75 (1994) 3205.
7. J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour and K. G. Irvine: J. Electron. Mater. 24 (1995) 303.
8. J. N. Shenoy, J. A. Cooper, Jr. and M. R. Melloch: Appl. Phys. Lett. 68 (1996) 803.
9. S. Jang, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 65 (1994) 581.