An experimental confirmation of automatic threshold voltage convergence in a flash memory using alternating word-line voltage pulses

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 503-505

  Gotou, H ^a  

^a JFE STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HOT CARRIERS;

ALTERNATING WORD LINE VOLTAGE PULSES; BAND TO BAND CURRENT; CHANNEL HOT CARRIER INJECTION; MULTILEVEL FLASH MEMORY;

VOLTAGE REGULATORS;

EID: 0031259242     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624938     Document Type: Article

References (2)

1. M. Lanzoni et al., "A novel approach to controlled programming of tunnel-based floating-gate MOSFET's," IEEE J. Solid-State Circuits, vol. 29, pp. 147-150, Feb. 1994.
2. H. Gotou, "New operation mode for stacked-gate flash memory cell," IEEE Electron Device Lett., vol. 16, pp. 120-123, Mar. 1995.