Polarizability of a hydrogenic impurity in a quantum-well wire: Effect of finite barrier height and nonsquare cross-section

Solid State Communications

Volumn 104, Issue 1, 1997, Pages 11-15

  Tran Thoai, D B ^a   Ninh, Quy Cuong ^a   Cao, Huy Thien ^a  

^a Vietnam National University Institute of Physics   (Viet Nam)

Author keywords

A. nanostructures; A. semiconductors; D. impurities

Indexed keywords

BINDING ENERGY; CRYSTAL IMPURITIES; LIGHT POLARIZATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

FINITE BARRIER HEIGHT; HYDROGENIC IMPURITY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031258993     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00274-3     Document Type: Article

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