Initial interface reaction in indium/amorphous selenium multilayer thin films

Philosophical Magazine Letters

Volumn 76, Issue 4, 1997, Pages 299-305

  Lu, K ^a,b   Perepezko, J H ^a   Lindahl, K A ^c   Lanning, B ^d  

^a University of Wisconsin Madison   (United States)

^b INSTITUTE OF METAL RESEARCH   (China)

^c Department of Geology and Geological Engineering   (United States)

^d Lockheed Martin Aerospace   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COALESCENCE; DIFFERENTIAL SCANNING CALORIMETRY; INTERFACES (MATERIALS); NUCLEATION; REACTION KINETICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SELENIUM; STOICHIOMETRY; THIN FILMS; VAPOR DEPOSITION;

INTERFACE REACTIONS;

OPTICAL MULTILAYERS;

EID: 0031258953     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008397179057     Document Type: Article

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