Metalorganic Vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001)

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1205-1213

  Marchand, H ^a,b   Desjardins, P ^a,c   Guillon, S ^a   Paultre, J E ^a   Bougrioua, Z ^a   Yip, R Y F ^a   Masut, R A ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b University of California   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Indium arsenide; Indium phosphide; Organometallic vapor phase epitaxy; Self assembled islands; Strain relaxation; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; THERMAL EFFECTS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ARSENIDE; SELF ASSEMBLED ISLANDS;

SEMICONDUCTING FILMS;

EID: 0031258796     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0021-z     Document Type: Article

References (42)

1. C.W. Snyder, B.G. Orr, D. Kessler and L.M. Sander, Phys. Rev. Lett. 66 (23), 3032 (1991).
2. R. Hull and A. Fisher-Colbrie, Appl. Phys. Lett. 50 (13), 851 (1987).
3. D.J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64 (16), 1943 (1990).
4. S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57 (20), 2110 (1990).
5. D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. DenBaars and P. Petroff, Appl. Phys. Lett. 63 (23), 3203 (1993).
6. S.P. DenBaars, C.M. Reaves, V. Bressler-Hill, S. Varma, W.H. Weinberg and P.M. Petroff, J. Cryst. Growth 145, 721 (1994).
7. Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures, ed. E.D. Jones, A. Mascarenhas, and P.M. Petroff, (Pittsburgh, PA: Materials Research Society, 1996).
8. R. Nötzel, Semicond. Sci. Technol. 11 (10), 1365 (1996).
9. Y. Chen and J. Washburn, Phys. Rev. Lett. 77 (19), 4046 (1996) and references therein.
10. J. Temmyo, E. Kuramochi, M. Sugo, T. Nishiya, R. Nötzel and T. Tamamura, Electron. Lett. 31 (3), 209 (1995).
11. D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Hao, V.M. Ustinov, A. Yu. Zhukov, P.S. Kop'ev, Zh. I. Alferov, S.S. Ruvimov, U. Gösele and J. Heydenreich, Jpn. J. Appl. Phys. 35 pt. 1, (2B) 1311 (1996).
12. H. Saito, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, Jpn. J. Appl. Phys. 35 pt. 2 (7B), L903 (1996).
13. H. Saito, K. Nishi, I. Ogura, S. Sugou and Y. Sugimoto, Appl. Phys. Lett. 69 (21), 3140 (1996).
14. G.S. Solomon, M.C. Larson and J.S. Harris, Jr., Appl. Phys. Lett. 69 (13), 1897 (1996).
15. J.C. Ferrer, F. Peiró, A. Cornet, J.R. Morante, T. Uztmeier, G. Armelles and F. Briones, Appl. Phys. Lett. 69 (25), 3887 (1996).
16. S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond and S. Charbonneau, Appl. Phys. Lett. 68 (7), 991 (1996).
17. A. Ponchet, A. Le Corre, H. L'Haridon, B. Lambert and S. Salaün, Appl. Phys. Lett. 67 (13), 1850 (1995).
18. A. Ponchet, A. Le Corre and R. Carles, Solid-State Electron. 40 (1/8), 615 (1996).
19. Z. Sobiesierski, D.I. Westwood, P.J. Parbrook, K.B. Ozanyan, M. Hopkinson and C.R. Whitehouse, Appl. Phys. Lett. 70 (11), 1423 (1997) and references therein.
20. H. Temkin, D.G. Gershoni, S.N.G. Chu, J.M. Vandenberg, R.A. Hamm and M.B. Panish, Appl. Phys. Lett. 55 (16), 1668 (1989).
21. D.R. Storch, R.P. Schneider, Jr. and B.W. Wessels, J. Appl. Phys. 72 (7), 3041 (1992).
22. R. Houdré, J.F. Carlin, A. Rudra, J. Ling and M. Ilegems, Superlattices Microstruct. 13 (1), 67 (1993).
23. H. Banvillet, E. Gil, R. Cadoret, P. Disseix, K. Ferdjani, A. Vasson, A.M. Vasson, A. Tabata, T. Benyattou and G. Guillöt, J. Appl. Phys. 70 (3), 1638 (1991).
24. M. Gendry, V. Drouot, C. Santinelli, G. Hollinger, C. Miossi and M. Pitaval, J. Vac. Sci. Technol. B 10 (4), 1829 (1992).
25. R.P. Schneider, Jr. and B.W. Wessels, Appl. Phys. Lett. 57 (19), 1998 (1990).
26. J.F. Carlin, R. Houdré, A. Rudra and M. Ilegems, Appl. Phys. Lett. 59 (23), 3018 (1991).
27. H. Marchand, M.Sc.A. Dissertation, École Polytechnique de Montréal (1996).
28. H. Marchand, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R. Y.-F. Yip and R.A. Masut, Appl. Phys. Lett. 71 (4), 527 (1997).
29. P. Cova, R.A. Masut, J.F. Currie, A. Bensaada, R. Leonelli and C.A. Tran, Can. J. Phys. 69, 412 (1991).
30. C.A. Tran, J.T. Graham, J.L. Brebner and R.A. Masut, J. Electron. Mater. 23 (12), 1291 (1994).
31. s was determined using an image analysis software by measuring the surface area lying above a grey-level threshold similar to the level used for measuring the island diameters.
32. J. Drucker, Phys. Rev. B 48 (24), 18203 (1993).
33. C.W. Snyder, J.F. Mansfield and B.G. Orr, Phys. Rev. B 46 (15), 9551 (1992).
34. Y. Androussi, P. François, A. Lefebvre, C. Priester, I. Lefebvre, G. Allan, M. Lannoo, J.M. Moison, N. Lebouche and F. Barthes, Mater. Res. Soc. Symp. Proc. 355, (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 569.
35. P. Chen, Q. Xie, A. Madhukar, L. Chen and A. Konkar, J. Vac. Sci. Technol. B 12 (4), 2568 (1994).
36. N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert and R. Wallenberg, J. Cryst. Growth 156, 23 (1995).
37. D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett. 71 (11), 378 (1993); A.G. Cullis, A.J. Pidduck, and M.T. Emeny, J. Cryst. Growth 158, 15 (1996); P. Desjardins, H. Marchand, L. Isnard and R.A. Masut, J. Appl. Phys., 81 (8), 3501 (1997).
38. D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett. 71 (11), 378 (1993); A.G. Cullis, A.J. Pidduck, and M.T. Emeny, J. Cryst. Growth 158, 15 (1996); P. Desjardins, H. Marchand, L. Isnard and R.A. Masut, J. Appl. Phys., 81 (8), 3501 (1997).
39. D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett. 71 (11), 378 (1993); A.G. Cullis, A.J. Pidduck, and M.T. Emeny, J. Cryst. Growth 158, 15 (1996); P. Desjardins, H. Marchand, L. Isnard and R.A. Masut, J. Appl. Phys., 81 (8), 3501 (1997).
40. The possibility that roughening can begin during the deposition of the last few monolayers of the InAs layer cannot be ruled out but does not modify the substance of the argument.
41. H. Marchand et al., unpublished.
42. C. Priester and M. Lannoo, Phys. Rev. Lett. 75 (1), 93 (1995).