In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1145-1153

  Kussmaul, A ^a   Vernon, S ^a   Colter, P C ^a   Sudharsanan, R ^a   Mastrovito, A ^a   Linden, K J ^a   Karam, N H ^b   Warnick, S C ^c   Dahleh, M A ^c  

^a SPIRE CORPORATION   (United States)

^b Spectrolab Inc   (United States)

^c Department of Electrical Engineering and Computer Science   (United States)

Author keywords

AlGaAs; Feedback control; InGaAs; Metalorganic chemical vapor deposition (MOCVD); Optical constants; Spectroscopic ellipsometry

Indexed keywords

CLOSED LOOP CONTROL SYSTEMS; ELLIPSOMETRY; FEEDBACK CONTROL; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

OPTICAL CONSTANTS; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0031258262     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0011-1     Document Type: Article

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