Total gamma dose characteristics of CMOS devices in soi structures based on oxidized porous silicon

IEEE Transactions on Nuclear Science

Volumn 44, Issue 5, 1997, Pages 1719-1723

  Bondarenko, V P ^a   Bogatirev, Y V ^b   Colinge, J P ^a   Dolgyi, L N ^b   Dorofeev, A M ^a   Yakovtseva, V A ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Radiation effects; Silicon materials devices; Silicon on insulator technology

Indexed keywords

DOSIMETRY; GAMMA RAYS; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; POROUS SILICON; RADIATION EFFECTS; SILICON ON INSULATOR TECHNOLOGY; SOLID STATE OSCILLATORS;

GAMMA IRRADIATION; RING OSCILLATORS;

CMOS INTEGRATED CIRCUITS;

EID: 0031257959     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.633424     Document Type: Article

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