Performance of a-Si:H thin film transistors fabricated by very high frequency discharge silane plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6269-6275

  Takechi, Kazushige ^a   Takagi, Tomoko ^b   Kaneko, Setsuo ^a  

^a NEC CORPORATION   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

Author keywords

a Si:H film; a Si:H TFT; Field effect mobility; High rate deposition; Parasitic resistance; Silane plasma CVD; TFT LCD; VHF discharge

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; HYDROGENATION; LIQUID CRYSTAL DISPLAYS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILANES;

FIELD EFFECT MOBILITY; PARASITIC RESISTANCE; PLASMA EXCITATION FREQUENCY;

THIN FILM TRANSISTORS;

EID: 0031251516     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6269     Document Type: Article

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