Suppression of parasitic bipolar action and improvement of hot-carrier reliability in fully-depleted metal-oxide-semiconductor field effect transistors on SIMOX (Separation by IMplanted Oxygen) introducing recombination centers near source junction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6175-6180

  Tsuchiya, Toshiaki ^a   Ohno, Terukazu ^a   Tazawa, Satoshi ^a   Tomizawa, Masaaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Hot carrier; MOSFET; Recombination center; Reliability; SIMOX; SOI

Indexed keywords

ARGON; ELECTRIC BREAKDOWN OF SOLIDS; HOT CARRIERS; ION IMPLANTATION; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

PARASITIC BIPOLAR ACTION SUPPRESSION; RECOMBINATION CENTERS; SEPARATION BY IMPLANTED OXYGEN (SIMOX); SOURCE JUNCTIONS;

MOSFET DEVICES;

EID: 0031251099     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6175     Document Type: Article

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