Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

Applied Physics A: Materials Science and Processing

Volumn 65, Issue 4-5, 1997, Pages 469-475

  Chryssou, C E ^a   Pitt, C W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARBON; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; PLASMA APPLICATIONS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS; THIN FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); TRIMETHYL AMINE ALANE;

AMORPHOUS FILMS;

EID: 0031251088     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050611     Document Type: Article

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