Thermal characterization of IGBT power modules

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1731-1734

  Cova, P ^a   Ciappa, M ^b   Franceschini, G ^a   Malberti, P ^b   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HEAT RESISTANCE; OPTICAL TESTING; POWER ELECTRONICS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THERMAL STRESS; TRANSIENTS;

IGBT POWER MODULES; INFRARED OPTICAL ANALYSIS; SATURATION VOLTAGE; TEMPERATURE SENSITIVE PARAMETER; THERMAL TIME CONSTANT;

BIPOLAR TRANSISTORS;

EID: 0031250839     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00150-9     Document Type: Article

References (3)

1. H. Brunner et al., 3300V IGBT module for traction application, Proc. of 6th Power Electronics and Applications (EPE), Sevilla, 1.056-1.059 (1995).
2. F. F. Oettinger et al., Thermal characterization of power transistors, IEEE Trans. Electron Dev., ED-23, 831-838 (1976).
3. B. J. Baliga, Temperature behavior of insulated gate transistor characteristics, Solid State Elect., 28, 289-297 (1985).