Dielectric confinement effects on the impurity and exciton binding energies of silicon dots covered with a silicon dioxide layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6416-6423

  Iwamatsu, Masao ^a   Horii, Kenju ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

Dielectric confinement; Exciton; Impurity; Quantum dot; Silicon; Silicon dioxide

Indexed keywords

BINDING ENERGY; CHARGE CARRIERS; CRYSTAL IMPURITIES; DIELECTRIC MATERIALS; ELECTROSTATICS; EXCITONS; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA;

DIELECTRIC CONFINEMENT EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031250776     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6416     Document Type: Article

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