Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy

Journal of Applied Physics

Volumn 82, Issue 8, 1997, Pages 3888-3890

  Hwang, J S ^a   Chou, W Y ^a   Hung, M C ^a   Wang, J S ^b   Lin, H H ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; FERMI LEVEL; IRON; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SPECTROSCOPY; SURFACE STRUCTURE; TIN;

ELECTROREFLECTANCE; FRANZ-KELDYSH OSCILLATION; MODULATION SPECTROSCOPY; PHOTOREFLECTANCE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031250699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365692     Document Type: Article

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