Layers decoration on FIB cross-sections

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1611-1614

  Perez, Guy ^a   Courtade, Frédéric ^a   Benteo, Bruno ^b   Lin Kwan, Jacques ^c  

^a CNES   (France)

^b SOREP   (France)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE;

DELINEATION; FOCUSED ION BEAM; LAYERS DECORATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0031250118     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00122-4     Document Type: Article

References (6)

1. Advances in focused ion beam repair of opaque defects IBM SPIE 2194
2. Maskless etching of a nanometer structure by focused ion beams Masaroni Komuro, H. Hiroshina JVST B1 (4), Oct. dec. 1983
3. Gas assisted etching with focused ions beam technology MICRION - ESREF 93
4. Advanced FIB applications for product analysis MOTOROLA East Kilbride SPIE 1994
5. How to decorate FIB Cross Sections using Plasma Etch for SEM Observation S.X.L.I., A. Gray - Advanced Micro Devices ISTFA'95
6. Observation of submicronic contacts and via by scanning ions and electron microscopy R. Pantel, G. Mascarin, J.P. Gonchond - CNET -D. Lafond - CEA ESREF'93