Direct Ga deposition by low-energy focused ion-beam system

Surface Science

Volumn 386, Issue 1-3, 1997, Pages 254-258

  Chikyow, T ^a   Koguchi, N ^a   Shikanai, A ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

Ga droplet; GaAs; Low energy focused ion beam; Selective growth

Indexed keywords

DEPOSITION; ION BEAMS; ION SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

KINETIC ENERGY; LOW ENERGY FOCUSED ION BEAMS;

SEMICONDUCTING GALLIUM;

EID: 0031249238     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00327-0     Document Type: Article

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