Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures

Electronics Letters

Volumn 33, Issue 22, 1997, Pages 1874-1875

  Li, Y B ^a   Cockburn, J W ^a   Skolnick, M S ^a   Birkett, M J ^a   Duck, J P ^a   Grey, R ^a   Hill, G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Aluminium gallium arsenide; Electroluminescence; Semiconductor lasers; Semiconductor superlattices

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

INTERSUBBAND ELECTROLUMINESCENCE; QUANTUM CASCADE STRUCTURES;

ELECTROLUMINESCENCE;

EID: 0031248374     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971209     Document Type: Article

References (8)

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