Numerical analysis of ISFET and LAPS devices

Sensors and Actuators, B: Chemical

Volumn 44, Issue 1-3, 1997, Pages 402-408

  Verzellesi, G ^a   Colalongo, L ^a,b   Passeri, D ^c   Margesin, B ^d   Rudan, M ^b   Soncini, G ^d   Ciampolini, P ^c  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF PERUGIA   (Italy)

^d ITC IRST   (Italy)

Author keywords

ISFET; LAPS; Numerical analysis

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTROLYTES; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; POTENTIOMETRIC SENSORS;

ELECTROLYTE INSULATOR SEMICONDUCTOR (EIS) SYSTEM; LIGHT ADDRESSABLE POTENTIOMETRIC SENSORS (LAPS);

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0031248210     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)00233-5     Document Type: Article

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