Growth and characterisation of mid-IR lnAs0. 9 Sb0. 1/lnAs strained multiple quantum well light emitting diodes grown on InAs substrates

IEE Proceedings: Optoelectronics

Volumn 144, Issue 5, 1997, Pages 295-298

  Grietens, B ^a,c   Nemeth S ^a   Van Hoof, C ^b   Van Daele, P ^a   Borghs, G ^b  

^a IMEC   (Belgium)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

InAs substrates; LED; Quantum well

Indexed keywords

COMPOSITION EFFECTS; ELECTROLUMINESCENCE; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS;

FLUX RATIO; LIQUID NITROGEN TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 0031248026     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971255     Document Type: Article

References (13)

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