Landau level formation in semiconductor quantum dots in a high magnetic field

Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2316-2318

  Nomura, S ^a,b   Samuelson, L ^a,b   Pistol, M E ^b   Uchida, K ^c   Miura, N ^c   Sugano, T ^a   Aoyagi, Y ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b LUND UNIVERSITY   (Sweden)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; EXCITONS; LASER APPLICATIONS; MAGNETIC FIELDS; MAGNETOOPTICAL EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

EXCITON EXCITON SCATTERING; HIGH MAGNETIC FIELD; LANDAU LEVEL; MAGNETIC CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031247346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120070     Document Type: Article

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