Noise and DC characteristics of power silicon diodes

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1635-1638

  Crook, R ^a   Jones, B K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SPURIOUS SIGNAL NOISE;

REVERSE BIAS; SILICON DIODE;

SEMICONDUCTOR DIODES;

EID: 0031246632     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00128-5     Document Type: Article

References (5)

1. B. K. Jones, Electrical Noise as a Measure of Quality and Reliability in Electronic Devices, Advances in Electronics and Electron Physics 87, 201-57 (1993).
2. R. V. Konakova, V. V. Rybalka, L. V. Scherbina and J. L. Zaitsevskii, Use of the Modulating Differentiation Technique to Study Breakdown Inhomogeneities in Avalanche Transit Time Silicon Diode, Solid-State Electron. 84 381-3 (1984).
3. G. Doblinger, A Burst Noise Model for Integrated Bipolar Transistors with Anomalous I-V Characteristics, Noise in Physical Systems, ed D Wolf, Bad Nauheim 1978, Springer-Verlag, New York, 64-9 (1978).
4. K. F. Knott, Anomalous I-V and Burst Noise Characteristics Associated with Surface Channels in an NPN Integrated Transistor, Solid-State Electron. 21 727-33, (1980).
5. J. Sikula, B. Koktavy, P. Vasina, Z. Chobola, P. Schauer and M. Korenska, Noise Diagnostics of PN Junction Power Devices, Proc. Fifth Europ. Symp. of Reliability of Electron Devices, Failure Physics and Analysis, ESREF 1994, 217-20