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Volumn 121, Issue 1, 1997, Pages 43-50
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Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors
a a a a a a a a a
a
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
DRY ETCHING;
ELECTRIC CHARGE;
FERROELECTRIC DEVICES;
LEAKAGE CURRENTS;
MASKS;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DEVICE TESTING;
ONE MASK PATTERNED FERROELECTRIC INTEGRATED CAPACITORS;
CAPACITORS;
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EID: 0031246061
PISSN: 04247760
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1520-6416(199710)121:1<43::AID-EEJ6>3.0.CO;2-# Document Type: Article |
Times cited : (4)
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References (10)
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