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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6215-6220

Two-terminal monolithic in0.5Ga0.5P/GaAs tandem solar cells with a high conversion efficiency of over 30%

(6) Takamoto, Tatsuya a,c Ikeda, Eiji a Kurita, Hiroshi a Ohmori, Masamichi b Yamaguchi, Masafumi c Yang, Ming Ju c

a JAPAN ENERGY CORPORATION (Japan)

b Japan Energy Research Center Co Ltd (Japan)

c TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

GaAs; InGaP; Photoluminescence; Tandem cell; Tunnel junction

Indexed keywords

CASCADE CONNECTIONS; CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; HETEROJUNCTIONS; MONOLITHIC INTEGRATED CIRCUITS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS; ZINC;

MINORITY CARRIER LIFETIME; OPEN CIRCUIT VOLTAGE; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 0031245652 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.6215 Document Type: Article

Times cited : (60)

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