InP-based millimeter-wave PIN diodes for switching and phase-shifting applications

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1635-1639

  Pavlidis, Dimitris ^a   Alekseev, Egor ^a   Hong, Kyushik ^a   Cui, Delong ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRIP DEVICES; MILLIMETER WAVE DEVICES; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHASE SHIFTERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SWITCHES;

SINGLE POLE SINGLE THROW (SPST) SWITCHES;

SEMICONDUCTOR DIODES;

EID: 0031245588     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00170-6     Document Type: Article

References (5)

1. Putnam, J., et al., in 1994 GaAs IC Symposium, pp. 333-336.
2. Teeter, D., et al., in 1994 IEEE MTT-S Symposium Digest, pp. 451-454.
3. Brylinski, C., Calligarro, M., Campoli, B., Dorel, M., Dua, C., d'Hayer, F. and Lacombe, J., Revue Technique Thomson-CSF, 1994, 26 (2), 319-340.
4. Kobayashi, K. W., et al., IEEE Microwave and Guided Wave Letters, 1993, 3, (10), pp. 384-386.
5. Alekseev, E., et al., in 1995 Int. Semiconductor Device Res. Symp. Proc., pp. 467-470.