Development of double recessed AlInAs/GaInAs/InP HEMTs for millimeter wave power applications

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1581-1585

  Hur, Katerina Y ^a   McTaggart, Rebeeca A ^a   Lemonias, Peter J ^a   Hoke, William E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

DOUBLE RECESSED GATE TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031245507     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00108-1     Document Type: Article

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