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Volumn 10, Issue 6, 1997, Pages 32-34
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Analyzing and assessing semiconductors - Part I
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Author keywords
[No Author keywords available]
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DISLOCATIONS (CRYSTALS);
ELECTRON ABSORPTION;
HALL EFFECT;
LUMINESCENCE OF SOLIDS;
MOLECULAR BEAM EPITAXY;
PARAMAGNETIC RESONANCE;
POINT DEFECTS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR GROWTH;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY CRYSTALLOGRAPHY;
BANDGAP DETERMINATION;
GLOW DISCHARGE MASS SPECTROMETRY (GDMS);
LATTICE PARAMETER DETERMINATION;
SEMICONDUCTOR DEVICE TESTING;
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EID: 0031245389
PISSN: 09611290
EISSN: None
Source Type: Journal
DOI: 10.1016/S0961-1290(97)82541-0 Document Type: Article |
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Times cited : (1)
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References (0)
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