Electronic states in La2-xSrxNiO4 (x = 0 to 1.20) investigated by scanning tunneling spectroscopy

Physica C: Superconductivity and its Applications

Volumn 289, Issue 3-4, 1997, Pages 223-229

  Kanai, M ^a   Matsuura, D ^b   Kawai, T ^a   Miki, H ^b  

^a OSAKA UNIVERSITY   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Electronic structure; Metal insulator transition; Scanning tunneling spectroscopy

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; OXIDE SUPERCONDUCTORS; SPECTROSCOPIC ANALYSIS;

METAL INSULATOR TRANSITION; SCANNING TUNNELING SPECTROSCOPY;

SUPERCONDUCTING FILMS;

EID: 0031245265     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(97)01609-2     Document Type: Article

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