A micro active probe device compatible with SOI-CMOS technologies

Journal of Microelectromechanical Systems

Volumn 6, Issue 3, 1997, Pages 242-248

  Yi, You Wen ^a,b,c,d,e   Kondoh, You ^a,c,f,g,h   Ihara, Kiyoyuki ^c,i,j,k   Saitoh, Mitsuchika ^a,c,e,l,m,n  

^a IEEE   (United States)

^b Stanford University   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

^d TOHOKU UNIVERSITY   (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f KEIO UNIVERSITY   (Japan)

^g TOSHIBA CORPORATION   (Japan)

^h Toshiba Corporation ^*  (India)

ⁱ UNIVERSITY OF TOKYO   (Japan)

^j YOKOGAWA ELECTRIC CORPORATION   (Japan)

^k Institute of Electronics   (Japan)

^l OSAKA UNIVERSITY   (Japan)

^m Toshiba Semiconduct Device Eng L   (Japan)

ⁿ Sumitomo Electric Co Ltd   (Japan)

more..

Author keywords

Adhesion; Charging; Electrostatic actuator; Onchip circuit; Probe; SOI; Stiction

Indexed keywords

ACTUATORS; ADHESION; CMOS INTEGRATED CIRCUITS; ELECTRODES; ELECTROSTATICS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

ELECTROSTATIC ACTUATOR; MULTIPROBE SCANNING PROBE MICROSCOPE;

PROBES;

EID: 0031238018     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.623113     Document Type: Article

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