Optimization of electron cyclotron resonance reactive ion beam etching reactors for dry etching of GaAs with Cl2

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3191-3197

  Nishioka, K ^a   Sugiyama, M ^a   Nezuka, M ^b   Shimogaki, Y ^a   Nakano, Y ^a   Tada, K ^a   Komiyama, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Plasma System Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHLORINE; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; OPTIMIZATION; OPTOELECTRONIC DEVICES; PLASMA DEVICES; PLASMA FLOW; REACTIVE ION ETCHING;

CONTINUOUSLY STIRRED TANK REACTORS; ELECTRON CYCLOTRON RESONANCE ION BEAM ETCHING; PLASMA REACTORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031237701     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837982     Document Type: Article

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