Measurement of effective drift velocities of electrons and holes in shallow multiple-quantum-well p-i-n modulators

IEEE Journal of Quantum Electronics

Volumn 33, Issue 9, 1997, Pages 1498-1506

  Yang, Ching Mei ^b,c   Canoglu, Ergun ^b,d   Garmire, Elsa ^a,b,d   Goossen, Keith W ^a,e   Cunningham, J E ^e   Jan, W Y ^e  

^a IEEE

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c Rice Systems Inc   (United States)

^d DARTMOUTH COLLEGE   (United States)

^e LUCENT TECHNOLOGIES   (United States)

Author keywords

Charge carrier processes; Electrooptic materials devices; p i n diode; Quantum confined Stark effect; Quantumwell devices; Spatial light modulator

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRON ABSORPTION; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL MATERIALS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

CARRIER DRIFT VELOCITY; CARRIER TRANSPORT; QUANTUM CONFINED STARK EFFECT;

LIGHT MODULATORS;

EID: 0031236282     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.622629     Document Type: Article

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