Vibration of an interface between Si and SiO2 during reduction of SiO2

Philosophical Magazine Letters

Volumn 76, Issue 3, 1997, Pages 173-179

  Tsukimot, S ^a   Sasaki, K ^a   Hirayama, T ^b   Saka, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRON MICROSCOPY; HEATING; HIGH TEMPERATURE EFFECTS; LATTICE VIBRATIONS; REDUCTION; SILICA; SILICON; SINGLE CRYSTALS;

VACUUM HEATING;

INTERFACES (MATERIALS);

EID: 0031235063     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008397179138     Document Type: Article

References (7)

1. Eer Nisse, E. P., 1979, Appl. Phys. Lett., 35, 8.
2. Frabboni, S., Matteucci, G., Pozzi, G., and Vanzi, M., 1985, Phys. Rev. Lett., 55, 2196.
3. Iijima, S., and Ichihashi, T., 1985, Jap. J. appl. Phys., 24, L125
4. Iijima, S., and Ichihashi, T. 1986, Phys. Rev. Lett., 56, 616.
5. Kamino, T., and Saka, H., 1993, Microsc. Microanal. Microstruct., 4, 127.
6. Sasaki, K., Murase, T., and Saka, H., 1994, Ultramicroscopy, 56, 184.
7. Sasaki, K., Saka, H., and Arii, T., 1996, Mater. Trans. Japan Inst. Metals, 37, 1037.