Effect of rate controlled sintering on microstructure and electrical properties of ZnO doped with bismuth and antimony oxides

Journal of Materials Research

Volumn 12, Issue 9, 1997, Pages 2447-2454

  Agarwal, Gaurav ^a   Speyer, Robert F ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; PRECIPITATION (CHEMICAL); REACTION KINETICS; SINTERING;

ANTIMONY OXIDE; BISMUTH OXIDE; RATE CONTROLLED SINTERING;

ZINC OXIDE;

EID: 0031234802     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0323     Document Type: Article

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