Ground state energy of the negatively charged exciton X- in bidimensional semiconductors in a steady electric field

Solid State Communications

Volumn 103, Issue 9, 1997, Pages 515-518

  Dujardin, F ^a   El Hassani, A ^a   Feddi, E ^b   Stebe B ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

^b ABDELMALEK ESSAADI UNIVERSITY   (Morocco)

Author keywords

A. semiconductors

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; CHARGED PARTICLES; ELECTRIC FIELD EFFECTS; EXCITONS;

EFFECTIVE MASS RATIO; GROUND STATE ENERGY;

SEMICONDUCTOR MATERIALS;

EID: 0031233445     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00234-2     Document Type: Article

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