Dielectric properties of Ba(Zn1/3Ta2/3)O3 thin films derived from a sol-gel process

Journal of Materials Science Letters

Volumn 16, Issue 17, 1997, Pages 1426-1429

  Ji, Zhou ^a   Barber, D J ^b  

^a TSINGHUA UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CRYSTAL ATOMIC STRUCTURE; PERMITTIVITY; RAMAN SCATTERING; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION;

DEGREE OF DENSIFICATION; DIELECTRIC LOSS; SOL GEL PROCESS;

BARIUM COMPOUNDS;

EID: 0031233382     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018573730172     Document Type: Article

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