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Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 220-223

Monte-Carlo simulation of Ge on Si(111) MBE growth: Analysis of percolative structure

(4) Daniluk, A a Mazurek, P a Paprocki, K a Mikolajczak P a

a MARIA CURIE SK ODOWSKA UNIVERSITY (Poland)

Author keywords

MBE growth of Ge on Si(111) Monte Carlo simulation; RHEED intensity oscillations

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MULTILAYERS; OSCILLATIONS; PERCOLATION (SOLID STATE); REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

SCHRODINGER EQUATIONS; STRANSKI KRASTANOV GROWTH;

SEMICONDUCTING FILMS;

EID: 0031224702 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00183-1 Document Type: Article

Times cited : (2)

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