-
1
-
-
0006594105
-
-
P. Capper (Ed.), INSPEC, London
-
C.T. Elliot, in: P. Capper (Ed.), Properties of Narrow Gap Cadmium-based Compounds, INSPEC, London, 1995, p. 311.
-
(1995)
Properties of Narrow Gap Cadmium-based Compounds
, pp. 311
-
-
Elliot, C.T.1
-
7
-
-
84953677447
-
-
Y. Nemirovsky, R. Adar, A. Korenfeld, I. Kidron, J. Vac. Sci. Technol. A4 (1986) 1986.
-
(1986)
J. Vac. Sci. Technol.
, vol.A4
, pp. 1986
-
-
Nemirovsky, Y.1
Adar, R.2
Korenfeld, A.3
Kidron, I.4
-
9
-
-
0000459122
-
-
P.V. Elfick, L.E.A. Berlouis, S.M. Macdonald, S. Affrossman, P. Rocabois, H. Tarry, J. Phys. Chem. 99 (1995) 15129.
-
(1995)
J. Phys. Chem.
, vol.99
, pp. 15129
-
-
Elfick, P.V.1
Berlouis, L.E.A.2
Macdonald, S.M.3
Affrossman, S.4
Rocabois, P.5
Tarry, H.6
-
11
-
-
0039672296
-
-
R.L. Strong, J.D. Luttmer, D.D. Little, T.H. Teherani, C.R. Helms, J. Vac. Sci. Technol. A4 (1986) 1992.
-
(1986)
J. Vac. Sci. Technol.
, vol.A4
, pp. 1992
-
-
Strong, R.L.1
Luttmer, J.D.2
Little, D.D.3
Teherani, T.H.4
Helms, C.R.5
-
12
-
-
0013121307
-
-
T. Ipposhi, K. Takita, K. Murakami, M. Masuda, H. Kudo, S. Seki, J. Appl. Phys. 63 (1988) 132.
-
(1988)
J. Appl. Phys.
, vol.63
, pp. 132
-
-
Ipposhi, T.1
Takita, K.2
Murakami, K.3
Masuda, M.4
Kudo, H.5
Seki, S.6
-
13
-
-
0027107993
-
-
L.E.A. Berlouis, L.M. Peter, R. Greef, M.G. Astles, J. Cryst. Growth 117 (1992) 918.
-
(1992)
J. Cryst. Growth
, vol.117
, pp. 918
-
-
Berlouis, L.E.A.1
Peter, L.M.2
Greef, R.3
Astles, M.G.4
-
14
-
-
0000370556
-
-
AJ. Bard (Ed.), Marcel Dekker, New York
-
S. Gottesfeld, in: AJ. Bard (Ed.), Electroanalytical Chemistry, Vol. 16, Marcel Dekker, New York, 1989, p. 143.
-
(1989)
Electroanalytical Chemistry
, vol.16
, pp. 143
-
-
Gottesfeld, S.1
-
16
-
-
0029716494
-
-
I. Yagi, J.M. Lantz, S. Nakabayashi, R.M. Corn, K. Uosaki, J. Electroanal. Chem. 401 (1996) 95.
-
(1996)
J. Electroanal. Chem.
, vol.401
, pp. 95
-
-
Yagi, I.1
Lantz, J.M.2
Nakabayashi, S.3
Corn, R.M.4
Uosaki, K.5
-
18
-
-
0000637343
-
-
B. Pettinger, L. Lipkowski, S. Mirwald, A. Friedrich, J. Electronal. Chem. 329 (1992) 289.
-
(1992)
J. Electronal. Chem.
, vol.329
, pp. 289
-
-
Pettinger, B.1
Lipkowski, L.2
Mirwald, S.3
Friedrich, A.4
-
19
-
-
0000253120
-
-
M.L. Lynch, B.J. Barner, J.M. Lantz, R.M. Corn, J. Chim. Phys. Phys. Chim. Biol. 88 (1991) 1271.
-
(1991)
J. Chim. Phys. Phys. Chim. Biol.
, vol.88
, pp. 1271
-
-
Lynch, M.L.1
Barner, B.J.2
Lantz, J.M.3
Corn, R.M.4
-
23
-
-
37049072165
-
-
R.R. Naujok, D.A. Higgins, D.G. Hanken, R.M. Corn, J. Chem. Soc. Faraday Trans. 91 (1995) 1411.
-
(1995)
J. Chem. Soc. Faraday Trans.
, vol.91
, pp. 1411
-
-
Naujok, R.R.1
Higgins, D.A.2
Hanken, D.G.3
Corn, R.M.4
-
25
-
-
0004277868
-
-
A.G. Volkov, D.W. Deamer (Eds.), Chap. 6, CRC Press, Boca Raton
-
P.F. Brevet, H.H. Girault, in: A.G. Volkov, D.W. Deamer (Eds.), Liquid-Liquid Interfaces, Theory and Methods, Chap. 6, CRC Press, Boca Raton, 1996.
-
(1996)
Liquid-liquid Interfaces, Theory and Methods
-
-
Brevet, P.F.1
Girault, H.H.2
-
30
-
-
0001638489
-
-
D. Wilk, D. Johannsmann, C. Stanners, Y.R. Shen, Phys. Rev. B 51 (1995) 10057.
-
(1995)
Phys. Rev. B
, vol.51
, pp. 10057
-
-
Wilk, D.1
Johannsmann, D.2
Stanners, C.3
Shen, Y.R.4
-
31
-
-
0003902682
-
-
Presses Polytechniques Universitaires Romandes, Lausanne
-
P.F. Brevet, in: Surface Second Harmonic Generation, Presses Polytechniques Universitaires Romandes, Lausanne, 1997.
-
(1997)
Surface Second Harmonic Generation
-
-
Brevet, P.F.1
-
32
-
-
33748613271
-
-
F. Jackson, P.V.E. Elfick, L.E.A. Berlouis, P.F. Brevet, A.A. Tamburello-Luca, H.H. Girault, J. Chem. Soc. Faraday Trans. 92 (1996) 4061.
-
(1996)
J. Chem. Soc. Faraday Trans.
, vol.92
, pp. 4061
-
-
Jackson, F.1
Elfick, P.V.E.2
Berlouis, L.E.A.3
Brevet, P.F.4
Tamburello-Luca, A.A.5
Girault, H.H.6
-
33
-
-
0742326452
-
-
J. Tunnicliffe, S.J.C. Irvine, O.D. Dosser, J.B. Mullin, J. Cryst. Growth 68 (1984) 245.
-
(1984)
J. Cryst. Growth
, vol.68
, pp. 245
-
-
Tunnicliffe, J.1
Irvine, S.J.C.2
Dosser, O.D.3
Mullin, J.B.4
-
34
-
-
85009368695
-
-
UK Patent GB 2261667 B (1996)
-
L.E.A. Berlouis, L.M. Peter, D.J. Schiffrin, M.G. Astles, N.T. Gordon, Method and Cell for Etching Semiconductors, UK Patent GB 2261667 B (1996).
-
Method and Cell for Etching Semiconductors
-
-
Berlouis, L.E.A.1
Peter, L.M.2
Schiffrin, D.J.3
Astles, M.G.4
Gordon, N.T.5
-
35
-
-
36549099434
-
-
P.M. Raccah, J.W. Garland, Z. Zhang, U. Lee, S. Ugur, S. Mioc, S.K. Ghandi, I. Bhat, J. Appl. Phys. 57 (1981) 2014.
-
(1981)
J. Appl. Phys.
, vol.57
, pp. 2014
-
-
Raccah, P.M.1
Garland, J.W.2
Zhang, Z.3
Lee, U.4
Ugur, S.5
Mioc, S.6
Ghandi, S.K.7
Bhat, I.8
-
36
-
-
0000444997
-
-
L.E.A. Berlouis, L.M. Peter, M.G. Astles, J. Gough, R.G. Humphreys, S.J.C. Irvine, V. Steward, J. Appl. Phys. 62 (1987) 4518.
-
(1987)
J. Appl. Phys.
, vol.62
, pp. 4518
-
-
Berlouis, L.E.A.1
Peter, L.M.2
Astles, M.G.3
Gough, J.4
Humphreys, R.G.5
Irvine, S.J.C.6
Steward, V.7
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