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Volumn 36, Issue 9 SUPPL. B, 1997, Pages 6021-6026
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Effect of A-site substitution and firing temperature on microstructure and electrical properties of BaTiO3 semiconducting ceramics fired by reduction-reoxidation method
a a a |
Author keywords
Annealing; BaTiO3; Oxygen atmosphere; Positive temperature coefficient of resistivity (PTCR); Reducing atmosphere; Reoxidation; Semiconductor; Small grain
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Indexed keywords
ANNEALING;
BARIUM TITANATE;
COOLING;
CRYSTAL MICROSTRUCTURE;
FIRING (OF MATERIALS);
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
OXIDATION;
REDUCTION;
SEMICONDUCTOR MATERIALS;
THERMAL EFFECTS;
FIRING TEMPERATURE;
POSITIVE TEMPERATURE COEFFICIENT OF RESISTIVITY (PCTR);
CERAMIC MATERIALS;
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EID: 0031221678
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.6021 Document Type: Article |
Times cited : (13)
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References (7)
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