Mechanisms of surface roughness induced in silicon by fluorine containing plasmas

Vacuum

Volumn 48, Issue 7-9, 1997, Pages 677-679

  Mansano, Ronaldo D ^a   Verdonck, Patrick ^a   Maciel, Homero S ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE COMPOUNDS; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SILICON;

BIAS VOLTAGES;

SURFACE ROUGHNESS;

EID: 0031221597     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(97)00067-5     Document Type: Article

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5. Verdonck, P., Swart, J. W., Brasseur, G. and De Geyter, P., J. Electrochem. Soc., 1995, 142, 1971.