Influence of buffer layers and barrier metals on properties of (Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 5874-5878

  Kawahara, Takaaki ^a   Yamamuka, Mikio ^a   Tanimura, Junji ^a   Tarutani, Masayoshi ^a   Kuroiwa, Takeharu ^a   Horikawa, Tsuyoshi ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Barrier metal; BST; Buffer layer; Capacitor; DRAM; Liquid source CVD; Reproducibility; Ru; TiN Ti; Two step deposition

Indexed keywords

BARIUM COMPOUNDS; CERAMIC CAPACITORS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; RANDOM ACCESS STORAGE; RUTHENIUM; SILICA; SILICON; SUBSTRATES; THICKNESS MEASUREMENT; TITANIUM NITRIDE;

BARIUM STRONTIUM TITANATE; DYNAMIC RANDOM ACCESS MEMORIES (DRAM); LIQUID SOURCE CHEMICAL VAPOR DEPOSITION;

INSULATING MATERIALS;

EID: 0031221134     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5874     Document Type: Article

References (13)

1. K. Ono, T. Horikawa, T. Kawahara, M. Yamamuka, A. Yuuki, T. Makita, T. Kuroiwa, M. Tarutani, T. Shibano, N. Mikami and S. Satoh: Abstr. 9th Int. Symp. Integrated Ferroelectrics (1997) 55i.
2. T. Horikawa, T. Kawahara, M. Yamamuka and K. Ono: Proc. 35th Int. Reliability Physics Symp., 1997 (IEEE, Piscataway, 1997) p. 82.
3. T. S. Chen, D. Hadad, V. Balu, B. Jiang, S. H. Kuah, P. C. McIntyre, S. R. Summerfelt, J. M. Anthony and J. C. Lee: Dig. Int. Electron Devices Meeting, San Francisco, 1996 (IEEE, Piscataway, 1996) p. 679.
4. H. Yamaguchi, T. Iizuka, H. Koga, K. Takemura, S. Sone, H. Yabuta, S. Yamamichi, P-Y. Lesaicherre, M. Suzuki, Y. Kojima, K. Nakajima, N. Kasai, T. Sakuma, Y. Kato, Y. Miyasaka, M. Yoshida and S. Nishimoto: Dig. Int. Electron Devices Meet., San Francisco, 1996 (IEEE, Piscataway, 1996) p. 675.
5. Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima and Y. Kawamoto: Dig. Int. Electron Devices Meet., Washington D.C., 1995 (IEEE, Piscataway, 1995) p. 111.
6. M. B. Lee, H. D. Lee, B. L. Park, U. I. Chung, Y. B. Koh and M. Y. Lee: Dig. Int. Electron Devices Meet., San Francisco, 1996 (IEEE, Piscataway, 1996) p. 683.
7. T. Kawahara, M. Yamamuka, A. Yuuki and K. Ono: Jpn. J. Appl. Phys. 35 (1996) 4880.
8. T. Horikawa, T. Makita, M. Yamamuka, T. Kawahara, T. Kuroiwa, T. Shibano, N. Mikami and K. Ono: Abstr. 9th Int. Symp. Integrated Ferroelectrics (1997) 53c.
9. T. Kawahara, M. Yamamuka, A. Yuuki and K. Ono: Jpn. J. Appl. Phys. 34 (1995) 5077.
10. T. Horikawa, T. Kawahara, M. Yamamuka and K. Ono: Abstr. Int. Symp. Applications of Ferroelectric Thin Films, September 1996, p. 26.
11. H. Myoren, T. Matsumoto and Y. Osaka: Jpn. J. Appl. Phys. 31 (1992) L1425.
12. T. Kawahara, M. Yamamuka, T. Makita, J. Naka, A. Yuuki, N. Mikami and K. Ono: Jpn. J. Appl. Phys. 33 (1994) 5129.
13. P. Kirlin, S. Bilodeau and P. V. Buskirk: Integr. Ferroelectr. 7 (1995) 307.