Bias field and end effects on the switching thresholds of pseudo spin valve memory cells

IEEE Transactions on Magnetics

Volumn 33, Issue 5 PART 1, 1997, Pages 3280-3282

  Pohm, A V ^a   Everitt, B A ^a  

^a NVE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS; MAGNETORESISTANCE;

PSEUDO SPIN VALVE MEMORY CELLS; SWITCHING THRESHOLDS;

MAGNETIC FILM STORAGE;

EID: 0031220862     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.617917     Document Type: Article

References (3)

1. H. Asada, K Matsuyama, K. Taniguchi, Micromagnetic Study on Write Operation in Sub-Micron Magnetic Random Access Memory Cell, Journ. Appl. phys. 79, pp. 6646-6648, March 1996
2. R. S. Beech, A.V. Pohm, J. M. Daughton, Simulation of Sub-micron GMR Memory Cells, IEEE Trans. Magn. 31, pp. 3203-3205, November 1995
3. Y. Zheng, I. Zhu, Micromagnetics of Spin Valve Memory Cells, Paper GE-12, 3M Conf. Nov. 1996, Atlanta, GA This work was supported by NSF Grant DMI 9508538