SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 244-247

Optical spectroscopy of MBE grown AlGaAS/GaAs quantum wells at various acceptor doping levels

(7) Ferreira, A C a Holtz, P O a Buyanova, I a Monemar, B a Sundaram, M b Merz, J L b Gossard, A C b

a LINKÖPING UNIVERSITY (Sweden)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Acceptor doping in MBE; AlGaAs GaAs quantum wells; Optical spectroscopy

Indexed keywords

EXCITONS; HYDROGEN; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

OPTICAL SPECTROSCOPY; PHOTOLUMINESCENCE EXCITATION (PLE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031220446 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00178-8 Document Type: Article

Times cited : (2)

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