Field programmable logic gates using gmr devices

IEEE Transactions on Magnetics

Volumn 33, Issue 5 PART 1, 1997, Pages 3307-3309

  Hassoun, Marwan M ^a  

^a Iowa State Universit   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; MAGNETIC FILMS; MAGNETORESISTANCE;

FIELD PROGRAMMABLE LOGIC DEVICES (FPLD); GIANT MAGNETORESISTANCE (GMR) SANDWICH FILMS;

LOGIC GATES;

EID: 0031220332     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.617926     Document Type: Article

References (3)

1. B, A, Everitt, A. V. Pohm and J. M Daughton, "Size Dependence of Switching Threshold for pseudo-spin-valve MRAM cells", Journal Of Applied Physics, April 1997.
2. Z. Wang and Y, Nakamura, "Quaternary GiantMagnetoresistance Random Access Memory, Journal of Applied Physics, vol. 79, 14 April 1996 pp. 6639.
3. I. W. Ranmuthu, K. T. M. Ranmuthu, C. Kohl, C.S. Comstock and M. Hassoun, "A S12K-Bit magnetoresistive memory with switched capacitor self- referencing sensing", IEEE Tran. Circuits Syst., CAS-39, No. 8, pp. 585-587, August 1992.