Short pulse plasma immersion ion implantation of oxygen into silicon: Determination of the energy distribution

Surface and Coatings Technology

Volumn 93, Issue 2-3, 1997, Pages 238-241

  Barradas, N P ^a,d   Maas, A J H ^b   Mandl S ^c   Gunzel R ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

Energy distribution of ions; Ion implantation; Plasma applications; Silicon oxide

Indexed keywords

COMPUTER SIMULATION; IRON; OXYGEN; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SILICA;

ELASTIC RECOIL DETECTION ANALYSIS; ENERGY DISTRIBUTION; PLASMA IMMERSION ION IMPLANTATION;

ION IMPLANTATION;

EID: 0031219764     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00052-2     Document Type: Article

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