Control of partially melted microstructure and critical current density for Bi-2212 tapes

Physica C: Superconductivity and its Applications

Volumn 282, Issue PART 4, 1997, Pages 2579-2580

  Funahashi, R ^a   Matsubara, I ^a   Ueno, K ^a   Ishikawa, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE SUPERCONDUCTORS; MELTING; OXIDE SUPERCONDUCTORS; SILVER; SOLIDIFICATION;

BISMUTH STRONTIUM CALCIUM COPPER OXIDE; ISOTHERMAL PARTIAL MELTING (IPM) METHOD;

SUPERCONDUCTING DEVICES;

EID: 0031213075     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(97)01426-3     Document Type: Article

References (4)

1. J. Kase et. al., Jpn. J. Appl. Phys. 29 (1990) L1096
2. J. Shimoyama et. al., Jpn. J. Appl. Phys. 31 (1992) L163
3. K. Nomura et. al., Appl. Phys. Lett. 62 (1993) 2131
4. R. Funahashi et. al., Physica C in press