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Physica A: Statistical Mechanics and its Applications

Volumn 242, Issue 1-2, 1997, Pages 161-165

Deep level defects in n- and p-type Fe implanted InP

(2) Bakry, Assem M a Darweesh, Salah b

a Ain Shams University (Egypt)

b MINIA UNIVERSITY (Egypt)

Author keywords

Deep levels; Defects; Indium phosphide; Semiconductor

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROSTATICS; ION IMPLANTATION; IRON; SEMICONDUCTOR DOPING; TIN; TRANSIENTS;

CARRIER TRAPS; COULOMBIC REPULSION; DEEL LEVEL DEFECTS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031212497 PISSN: 03784371 EISSN: None Source Type: Journal
DOI: 10.1016/S0378-4371(97)00201-X Document Type: Article

Times cited : (2)

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