Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 76-80

  Lai, Say Teng ^a   Alexiev, Dimitri ^b   Schwab, Claude ^c   Donnelly, Ian ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE SPECTROSCOPY;

BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; GAMMA RAYS; IONIZATION; PARAMAGNETIC RESONANCE; RADIATION EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031211872     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00617-7     Document Type: Article

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