Superconductivity of reactively sputtered TaN film for ULSI process

Physica B: Condensed Matter

Volumn 239, Issue 1-2, 1997, Pages 29-31

  Wakasugi, Katsuhiko ^a   Tokunaga, Mie ^a   Sumita, Taishi ^a   Kubota, Hiroshi ^a   Nagata, Masanori ^b   Honda, Yukio ^b  

^a KUMAMOTO UNIVERSITY   (Japan)

^b KUMAMOTO INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

Cubic TaN; Diffusion barrier; Reactive sputtering; Superconductivity

Indexed keywords

FILM GROWTH; FILM PREPARATION; METALLIC FILMS; SPUTTERING; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY; TANTALUM COMPOUNDS; TEMPERATURE MEASUREMENT; THIN FILMS; ULSI CIRCUITS; X RAY DIFFRACTION ANALYSIS;

CUBIC TANTALUM NITRIDE; RADIOFREQUENCY REACTIVE SPUTTERING;

NITRIDES;

EID: 0031211720     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(97)00370-0     Document Type: Article

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