High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters

Volumn 9, Issue 8, 1997, Pages 1143-1145

  Yamagata, Tomonari ^b   Shimomura, Kazuhiko ^a,b  

^a IEEE

^b SOPHIA UNIVERSITY   (Japan)

Author keywords

Bonding; MOSFET's; Optical interconnections; Photodetectors

Indexed keywords

BONDING; INTEGRATED OPTICS; LIGHT ABSORPTION; OPTICAL INTERCONNECTS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SUBSTRATES;

DIRECT WAVER BONDING; PHOTORECEIVERS;

MOSFET DEVICES;

EID: 0031211164     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605530     Document Type: Article

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