Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes

Journal of Applied Physics

Volumn 82, Issue 4, 1997, Pages 1711-1715

  McGarvey, B ^a   Curran, J E ^a   Ford, R A ^a   French, I D ^a   Gale, I G ^a   Hewett, J ^a   Sandoe, J N ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; INTERFACES (MATERIALS); SILICON NITRIDE; STABILITY; THIN FILM DEVICES;

CONDUCTION BAND; ELECTRICAL STRESSING; THIN FILM DIODES;

SEMICONDUCTOR DIODES;

EID: 0031210916     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365971     Document Type: Article

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