Escape probability of signal Auger and photoelectrons from ultrathin overlayers

Surface and Interface Analysis

Volumn 25, Issue 9, 1997, Pages 683-687

  Tilinin, I S ^a,c   Zemek, J ^b   Hucek, S ^b  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Aluminium oxide; Escape probability of photoelectrons; Overlayer substrate structure; X ray photoelectron spectrosopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM OXIDE; ELASTIC SCATTERING;

ULTRATHIN FILMS;

EID: 0031210313     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199708)25:9<683::AID-SIA282>3.0.CO;2-G     Document Type: Article

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